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| inchange semiconductor product specification silicon npn power transistors 2SC3310 description ? ? with to-220fa package ? high collector breakdown voltage ?excellent switching times applications ? switching regulator ? high speed dc-dc converter ? high voltage switching pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current (pulse) 7 a i b base current (dc) 1 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC3310 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 500 v v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 400 v v cesat collector-emitter saturation voltage i c =5a ;i b =1a 1.0 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 100 | a i ebo emitter cut-off current v eb =7v; i c =0 1 ma h fe-1 dc current gain i c =3a ; v ce =5v 12 h fe-2 dc current gain i c =5a ; v ce =5v 8 switching times t r rise time 1.0 | s t s storage time 2.5 | s t f fall time i c =4a ;i b1 =-i b2 =0.4a v cc ?? 200v;r l =10 |? 1.0 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC3310 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC3310 inchange semiconductor product specification 5 silicon npn power transistors 2SC3310 |
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